Prospects for <i>n</i>-type conductivity in cubic boron nitride

Cubic boron nitride is an ultrawide-bandgap semiconductor with potential applications in high-power electronics, ultraviolet optoelectronics, and quantum information science. Many of those are predicated on the ability to control doping. Using hybrid-functional first-principles calculations, we systematically explore donors including group-IV (C, Si, Ge) group-VI (O, S, Se) elements, as well Li F. We also address role compensation either by substitution wrong site or due native point defects. identify SiB ON promising dopants, they have lowest formation energies do not suffer from self-compensation. However, vacancies, which act deep acceptors, poses a challenge. discuss strategies mitigate these effects.